Learn the principles of field-effect transistors (FETs) with the UE3080300-230 experiment. Essential for understanding FET behavior in electronic circuits.

Experiment: Field effect transistors (230 V, 50/60 Hz) UE3080300-230

Name: Experiment: Field effect transistors (230 V, 50/60 Hz) UE3080300-230
Brand: 3B Scientific
SKU: 005-UE3080300-230
Price: 2364.13 CAD
Availability: InStock

3B Scientific

SKU 005-UE3080300-230

(No reviews yet) Write a Review

$2,364.13

Objective: Measure the characteristics of a field effect transistorA field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field ac…

View full description ↓

Healthcare-grade equipment
Canada-wide shipping
B2B & bulk pricing available

Current Stock:

Quantity:

Adding to cart… The item has been added

Secure checkout with:

Ordering for a clinic, EMS, or facility? Use “Add to Quote” or contact us for tailored volume pricing.

Why EMRN?

Supplying clinics, EMS, long-term care and home-care across Canada with trusted equipment.

Product details

Description

Objective: Measure the characteristics of a field effect transistor

A field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field acting perpendicular to the channel. FETs have three contacts, called source, drain and gate due to their respective functions.

If a voltage is applied between the source and the drain, then a drain current flows between the two. For small voltages between the drain and source, an FET acts like a simple ohmic resistor with a correspondingly linear characteristic. As the source-drain voltage increases, the channel becomes restricted and eventually is cut off entirely. The characteristic then enters an area of saturation. When the gate voltage is non-zero, the saturation value of the drain current decreases.