Learn the principles of field-effect transistors (FETs) with the UE3080300-230 experiment. Essential for understanding FET behavior in electronic circuits.

Experiment: Field effect transistors (230 V, 50/60 Hz) UE3080300-230

3B Scientific

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005-UE3080300-230
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Objective: Measure the characteristics of a field effect transistor

A field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field acting perpendicular to the channel. FETs have three contacts, called source, drain and gate due to their respective functions.
 
If a voltage is applied between the source and the drain, then a drain current flows between the two. For small voltages between the drain and source, an FET acts like a simple ohmic resistor with a correspondingly linear characteristic. As the source-drain voltage increases, the channel becomes restricted and eventually is cut off entirely. The characteristic then enters an area of saturation. When the gate voltage is non-zero, the saturation value of the drain current decreases.

Documentation

Download PDF UE3080300_Experiment instruction
 
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Brand 3B Scientific
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