Explore the principles of bipolar transistors with the UE3080200-230 experiment. Perfect for understanding transistor behavior and applications.

Experiment: Bipolar transistors (230 V, 50/60 Hz) UE3080200-230

3B Scientific

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005-UE3080200-230
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Objective: Messung der relevanten Kennlinien eines npn-Transistors

A bipolar transistor is an electronic component composed of three alternating p-doped and n-doped semiconductor layers called the base, the collector and the emitter. Depending on the sequence of the layers, the transistor may either be termed npn or pnp. The response of a bipolar transistor may be distinctively described by, for example, an input characteristic, a control characteristic and an output characteristic. In this experiment, examples of these are to be measured for an npn transistor, displayed on a graph and evaluated.

Documentation

Download PDF UE3080200_Experiment instruction
 
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Brand 3B Scientific
 
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